EC733322B1R datasheet(1/4 Pages) E-CMOS

Part #	EC733322B1R

Description	30V, 5.8A N-Channel MOSFET

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Manufacturer	E-CMOS [E-CMOS Corporation]

Direct Link	http://www.ecmos.com.tw/

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EC733322

30V、5.8A N-Channel MOSFET

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 4

4J01-Rev.F002

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V①

1

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V①

0.75

IDM

Pulsed Drain Current②

4

PD @TC = 25°C

Power Dissipation③

44

W

Linear Derating Factor

0.36

W/°C

VDS

Drain-Source Voltage

800

V

VGS

Gate-to-Source Voltage

± 30

V

EAS

Single Pulse Avalanche Energy @ L=100mH

50

mJ

IAS

Avalanche Current @ L=100mH

1

A

TJ TSTG

Operating Junction and Storage Temperature Range

-55 to + 150

°C

Description

The EC733322 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable

for use as a load switch or in PWM applications.

Features :

◆ VDS = 30V,ID =5.8A

RDS(ON)

< 43mΩ @ VGS=4.5V

RDS(ON)

< 28mΩ @ VGS=10V

◆ High Power and current handing capability

◆ Lead free product is acquired

Schematic diagram

◆ Surface Mount Package

Application

◆ PWM applications

◆ Load switch

◆ Power management

pin Assignment

Main Product Characteristics

Absolute max Rating

VDSS

30V

RDS(on)

22m

Ω(typ.)

ID

5.8A

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