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RHRG3060 Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd. |
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RHRG3060 Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd. |
1 / 3 page TO-247-2L/TO-247-2PIN ® RHRG3060 Pb Free Plating Product RHRG3060 30.0 Ampere,600Volt SwitchMode Single Fast Recovery Epitaxial Diode Pb © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3 Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside · Ultrafast Recovery Time · Soft Recovery Characteristics · Low Recovery Loss · Low Forward Voltage · High Surge Current Capability · Low Leakage Current APPLICATION GENERAL DESCRIPTION · Freewheeling, Snubber, Clamp · Inversion Welder · PFC · Plating Power Supply · Ultrasonic Cleaner and Welder · Converter & Chopper · UPS PRODUCT FEATURE RHRG3060 using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 600 V VRRM Maximum Repetitive Reverse Voltage 600 V IF(AV) Average Forward Current TC=110°C, Per Diode 30 A IF(RMS) RMS Forward Current TC=110°C, Per Diode 42 A IFSM Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine 300 A PD Power Dissipation 156 W TJ Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended(M3) 1.1 N·m RθJC Thermal Resistance Junction-to-Case 0.8 °C /W Weight 6.0 g Symbol Parameter Test Conditions Min. Typ. Max. Unit VR=600V -- -- 15 µA IRM Reverse Leakage Current VR=600V, TJ=125°C -- -- 250 µA IF=30A -- 2.0 -- V VF Forward Voltage IF=30A, TJ=125°C -- 1.65 -- V trr Reverse Recovery Time IF=1A, VR=30V, diF/dt=-200A/μs -- 22 -- ns trr Reverse Recovery Time -- 35 -- ns IRRM Max. Reverse Recovery Current VR=300V, IF=30A diF/dt=-200A/μs, TJ=25°C -- 2.5 -- A trr Reverse Recovery Time -- 110 -- ns IRRM Max. Reverse Recovery Current VR=300V, IF=30A diF/dt=-200A/μs, TJ=125°C -- 7.0 -- A Rev.07C |
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