T5096P

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 05-Nov-14

2

Document Number: 84190

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• The measurements are based on samples of die which are mounted on a TO-header without resin coating

Fig. 1 - Relative Spectral Sensitivity vs. Wavelength

Fig. 2 - Collector Emitter Capacitance vs. Collector Emitter Voltage

Note

• All products are checked in accordance with the Vishay Semiconductor, specification of visual inspection FVOV6870.

The visual inspection shall be made in accordance with the “specification of visual inspection as referenced”. The visual inspection of wafer

backside is performed with stereo microscope with incident light and 40x to 80x magnification.

The quality inspection (final visual inspection) is performed by production. An additional visual inspection step as special release procedure

by QM is not installed.

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Collector emitter breakdown voltage

85

V

Collector emitter dark current

< 1

50

nA

Wavelength of peak sensitivity

910

nm

Range of spectral bandwidth

480 to 1080

nm

λ - Wavelength (nm)

21703

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

400

500

600

700

800

900

1000

1100

0

5

6

7

8

0.1

1

10

100

V

f = 1 MHz

1

2

3

4

MECHANICAL DIMENSIONS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Length of chip edge (x-direction)

0.39

mm

Length of chip edge (y-direction)

0.39

mm

Die height

H

0.170

0.185

0.200

mm

Bond pad emitter

d

Ø 0.10 (bonding area)

mm

ADDITIONAL INFORMATION

Frontside metallization, emitter

AlSi 1.2 μm

Backside metallization, collector

AuSb 0.4 μm

Dicing

Sawing

Die bonding technology

Epoxy bonding