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T1120P-SD-F Datasheet(PDF) 1 Page - Vishay Siliconix |
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T1120P-SD-F Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page T1120P www.vishay.com Vishay Semiconductors Rev. 1.5, 07-Dec-15 1 Document Number: 81121 For technical questions, contact: optochipsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon PIN Photodiode DESCRIPTION T1120P is a high speed and high sensitive PIN photodiode chip with 4.4 mm2 sensitive area detecting visible and near infrared radiation. Anode is the bond pad on top. FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 2.37 x 2.37 x 0.28 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 60° • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector GENERAL INFORMATION The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore sold die may not perform on an equivalent basis to standard package products. Note • Test conditions see table “Basic Characteristics” Note • MOQ: minimum order quantity 21678 A PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) T1120P 35 ± 60 430 to 1100 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM T1120P-SD-F Wafer sawn on foil with discoframe MOQ: 5000 pcs Chip ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 60 V Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg1 -40 to +100 °C Storage temperature range on foil Tstg2 -40 to +50 °C |
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