T1120P

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 07-Dec-15

1

Document Number: 81121

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Silicon PIN Photodiode

DESCRIPTION

T1120P is a high speed and high sensitive PIN photodiode

infrared radiation. Anode is the bond pad on top.

FEATURES

• Package type: chip

• Package form: single chip

• Dimensions (L x W x H in mm): 2.37 x 2.37 x 0.28

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity:

ϕ = ± 60°

• Material categorization: for definitions of compliance

APPLICATIONS

• High speed photo detector

GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

21678

A

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

T1120P

35

± 60

430 to 1100

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

T1120P-SD-F

Wafer sawn on foil with discoframe

MOQ: 5000 pcs

Chip

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

60

V

Junction temperature

100

°C

Operating temperature range

-40 to +100

°C

Storage temperature range

-40 to +100

°C

Storage temperature range on foil

-40 to +50

°C