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MSL120N10G Datasheet(PDF) 2 Page - Chip Integration Technology Corporation |
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MSL120N10G Datasheet(HTML) 2 Page - Chip Integration Technology Corporation |
2 / 7 page 2 O ■ Electrical characteristics(T = 25 C unless otherwise specified) A PARAMETER Gate to source Leakage Current Input Capacitance Output Capacitance Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Reverse Transfer Capacitance Diode Forward Voltage Reverse Recovery Time Total Gate Charge Reverse Recovery Charge Gate Threshold Voltage PARAMETER PARAMETER ■ Dynamic Characteristics(note:5) ■ Reverse Diode Characteristics V = 0V, I = 250µA G S D CONDITIONS Symbol V ( B R ) D S S I D S S MIN. 100 TYP. MAX. UNIT V nA uA I G S S 12 ±100 100 1 1.9 V = 0V, V = 100V, T = 25°C G S D S J V = 0V, V = 100V, T = 100°C G S D S J V = ±20V, V = 0V G S D S C o s s C r s s pF C i s s 7.9 162 2275 V = 0V, V = 50V, f = 1MHz G S D S CONDITIONS Symbol MIN. TYP. MAX. UNIT V Q r r V S D 157 33 0.9 CONDITIONS Symbol MIN. TYP. MAX. UNIT Q (10V) g V = V , I = 250µA G S D S D V G S ( t h ) 1.4 2.4 Drain-Source On Resistance(note:4) V = 10V, I = 12A G S D V = 4.5V, I = 10A G S D R D S ( o n ) 9.5 15 11.5 V = 0V, I = 12A G S F 1.2 V = 50V, I = 12A, dI /dt = 500A/μs R F F t r r nC Turn on Delay Time Rise Time Turn off Delay Time Fall Time V = 50V, I = 14A, V =10V, R = 10Ω D D D G S G ns 8 3 26 4 Gate-Source Charge Gate-Drain Charge V = 50V, I =14A V =10V, D S D G S Q g s Q g d 29 5 5 nC mΩ ns t d ( o n ) t r t d ( o ff ) t f Total Gate Charge Q (4.5V) g 14 MSL120N10G N-Channel Enhancement Mode MOSFET Transconductance Gate resistance V = 5V, I = 12A D S D V = 0V, V open, f=1MHz G S D S g f S R G Ω S 45 1.5 ■ Static characteristics Document ID : DS-22M83 Revised Date : 2016/03/07 Revision : C |
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