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MSL049P03G Datasheet(PDF) 5 Page - Chip Integration Technology Corporation |
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MSL049P03G Datasheet(HTML) 5 Page - Chip Integration Technology Corporation |
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5 / 11 page  5 ■ Rating and characteristic curves Drain-Source On Resistance Tj - Junction Temperature (°C) -VSD- Source - Drain Voltage (V) Source-Drain Diod e Forward -VDS - Drain-Source Voltage (V) Capacitance Gate Charge QG - Gate Charge (nC) MSL049P03G P-Channel Enhancement Mode MOSFET -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 R ON @T j =25 oC: 3.9mW V GS = -10V I DS = -23.8A 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 100 T j =150 oC T j =25 oC 0 5 10 15 20 25 30 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 Frequency=1MHz Crss Coss Ciss 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 8 9 10 V DS =-15V I DS =-23.8A Document ID : DS-22M73 Revised Date : 2016/08 Revision : C1 |
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