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TSM006IDT Datasheet(PDF) 4 Page - STMicroelectronics |
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TSM006IDT Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 13 page TSM006 Electrical Characteristics 4/13 3 Electrical Characteristics Tamb = 25°C, Vin=15V, Rt=39k, Ct=470pF, Rex=27k, Cfm=1nF unless otherwise specified Symbol Parameter Test Condition Min Typ Max Unit Main oscillator Fosco FoscL Lower oscillating frequency Upper oscillating frequency 8 ≤Vin≤20V, 0≤Ta≤105°C Vfm=GND Vfm=Vref 63 57.6 68 62 73 66.4 kHz kHz Fjit Frequency jitter Fjit=Fosco - FoscL 6 7 8 kHz Ffm Frequency modulation 4.5 kHz Vthct Upper trip point Vfm=GND 3.0 V Vtlct Lower trip point Vfm=GND 1.4 V ∆Vct Amplitude Vfm=GND 1.6 V Idct1 Discharge current Vct=2V 300 µA Idct2 Current at Ct in UVLO Vct=1V 1 3 mA Disable Vdis Voltage threshold 2.5 2.65 2.8 V Vref reference pin Vref Voltage reference 4.91 5.00 5.09 V ∆Vline Line regulation 12V ≤ Vin ≤ 20V 5 10 mV ∆Vload Load regulation 1mA ≤ Iref ≤ 5mA 10 20 mV ∆Vtotal Total variation Line, load, temp 4.85 5.00 5.15 V Ios Short circuit current Vref=0 10 mA Slope Compensation IsinkCP Sink current Vct=2.2V, VCslope=1V 90 µA IsrcCP Source current Vct=2.2V, VCslope=0V 2 mA Comp Icomp Source current Vcomp=5V 0.5 0.6 0.7 mA Current sense Avcs Gain 0V ≤ Vcs ≤ 0.8V 2.85 3.00 3.15 Vz1 Maximum sensing voltage Vcomp=5V 0.9 1.0 1.1 V PSRR Power supply voltage rejection ratio 8V ≤ Vin ≤ 20V 70 dB Leading edge blanking LEB Delay to output Vcs = 0 to 2 V Vcomp=2V 280 ns Output VOL1 Output low voltage 1 Iosink=20mA 1.0 V VOL2 Output low voltage 2 Iosink=200mA 0.8 2.2 V VOH1 Output high voltage 1 Iosource=20mA Vin-2.0 V VOH2 Output high voltage 2 Iosource=200mA Vin-3.0 V tr Rise time CL=1nF, 10% to 90% 70 100 ns tf Fall time CL=1nF, 90% to 10% 40 60 ns VOL3 UVLO saturation Vin=5V, Iosink=1mA 0.5 V Fout Output frequency Option 1 Fosc kHz DCmax Maximum Duty Cycle Option 1 77.5 % |
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