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MHF04N60CT Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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MHF04N60CT Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
1 / 10 page 1 ■ Features O ■ Absolute(T = 25 C unless otherwise specified) C Fast switching. • ESD improved capability. • Low gate charge. (Typical Data:14.5nC) • Low reverse transfer capacitances.(Typical:8.5pF) • 100% single pulse avalanche energy test. • PARAMETER Continuous Drain Current Pulsed Drain Current(Note:1) Avalanche Energy, Repetitive (Note:1) Single Pulse Avalanche Energy(Note:2) Power Dissipation Maximum temperature for soldering Drain to Source Voltage Avalanche Current(Note:1) Document ID : DS-22M77 Revised Date : 2015/09/25 Revision : C Gate to Source Voltage CONDITIONS Symbol V D S S T L I A R MHF04N60CT ±30 200 UNIT V mJ I D 300 30 4 A O C I D M E A S 30 16 600 2.5 A V G S E A R W mJ P D V O Derating factor above 25 C Continuous Drain Current O T = 100 C C 3.2 0.24 O W/ C Operating Junction and Storage Temperature Range T , T J S T G 150,-55 ~ +150 O C Gate source ESD V E S D ( G - S ) 3000 V HBM-C = 100pF, R = 1.5kΩ Peak Diode Recovery dv/dt(Note:3) dV/dt 5.0 V/ns NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature. O 2.L=10.0mH, I = 6.3A, Start T = 25 C. D J O 3.I =4A,di/dt ≤100A/µs, V ≤BV , Start T = 25 C. S D D D D S J Main Product Characteristics I D 4A V D S S o P (T =25 C) D C R D S ( O N ) Ty p 600V 30W 1.8Ω ■ Application Power switch circuit of adaptor and charger. • ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : JEDEC TO-220F molded plastic body over passivated chip • Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed. Drain Source Gate Inner Equivalent principium Chart 1.Gate 2.Drain 3.Source 1 2 3 Power Dissipation ■ Outline TO-220F MHF04N60CT Silicon N-Channel Power MOSFET Chip Integration Technology Corporation |
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