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MBR10L100CT-T Datasheet(PDF) 1 Page - Chip Integration Technology Corporation |
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MBR10L100CT-T Datasheet(HTML) 1 Page - Chip Integration Technology Corporation |
1 / 3 page 1 Document ID : DS-11KHY Revised Date : 2016/08/15 Revision : C1 ■ Mechanical data ■ Maximum ratings and electrical characteristics O Rating at 25 C ambient temperature unless otherwise specified. ■ Outline 10A Trench Schottky Rectifier I O T S T G Forward rectified current (total device) Typical Thermal resistance (per leg) Storage temperature Parameter Conditions Symbol MBR10L100CT-T UNIT -55 ~ +150 10 A O C/W O C R θ J C Junction to case 2 Working peak reverse voltage V RW M 100 V MBR10L100CT-T • Epoxy : UL94-V0 rated flame retardant. . • Case : JEDEC TO-220AB molded plastic body • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. ed. • Polarity: As mark . • Mounting Position : Any . • Weight : Approximated 2.25 gram TO-220AB symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max 0.398(10.1) 0.406(10.3) 0.236(6.0) 0.252(6.4) 0.579(14.7) 0.594(15.1) 0.543(13.8) 0.551(14.0) 0.143(3.63) 0.159(4.03) 0.104(2.64) 0.112(2.84) 0.335(8.5) 0.350(8.9) 0.046(1.17) 0.054(1.37) 0.028(0.71) 0.036(0.91) 0.098(2.49) 0.102(2.59) 0.176(4.47) 0.184(4.67) 0.046(1.17) 0.054(1.37) 0.102(2.6) 0.110(2.8) 0.019(0.28) 0.021(0.48) 0.147(3.74) 0.155(3.94) symbol Dimensions in inches(millimeters) A B C D E F G H I J K L M N ØP Min Max 0.394(10.0) 0.413(10.5) 0.228(5.8) 0.268(6.8) 0.570(14.48) 0.625(15.87) 0.519(13.18) 0.558(14.18) 0.089(3.5) 0.099(3.9) 0.100(2.54) 0.120(3.04) 0.330(8.38) 0.350(8.9) 0.045(1.15) 0.060(1.52) 0.029(0.75) 0.037(0.95) 0.095(2.42) 0.105(2.66) 0.160(4.07) 0.190(4.82) 0.045(1.15) 0.055(1.39) 0.080(2.04) 0.110(2.8) 0.013(0.33) 0.019(0.52) 0.148(3.75) 0.156(3.95) Alternate Marking code A ØP B J L C D E F G H I K M N Marking code A ØP B J L C D E F G H I K M N C Dimensions in inches and (millimeters) Chip Integration Technology Corporation Main Product Characteristics I F ( AV ) 5 X 2A V R R M T J V F ( Ty p ) 100V O -55 to +150 C 0.56V Peak Forward surge current I F S M 150 Peak repetitive reverse surge current 2us-1Khz I R R M 1 Instantaneous Forward voltage drop (per diode) Instantaneous Reverse current (per diode) Parameter V F I R V = 100V R Conditions Symbol TYP. UNIT 25 mV mA MIN. MAX. O I = 3A, T = 25 C F J O I = 5A, T = 25 C F J 670 630 550 O I = 5A, T = 125 C F J 560 uA 50 3 3 V = 100V R ■ Features Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Lead-free parts meet environmental standards of • MIL-STD-19500 /228 O T = 25 C J ■ Circuit Diagram Junction to ambient R θ J A 50 O C -55 ~ +150 T J Operating Junction temperature O T = 125 C J O C/W V B R Reverse Breakdown Voltage (per diode) O I = 0.1mA, T = 25 C R J 100 8.3ms single half sine-wave superimposed on rate load (JEDEC method) |
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