TEPT4400

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Vishay Semiconductors

Rev. 1.8, 30-Jun-16

2

Document Number: 81341

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Note

• Each 5000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot

be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly.

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

21337

R

T

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Collector emitter breakdown voltage

6-

-

V

Collector dark current

-

3

50

nA

Collector emitter capacitance

-16

pF

Collector light current

15

-

70

μA

-

200

-

μA

Angle of half sensitivity

ϕ

-± 30

-

deg

Wavelength of peak sensitivity

-

570

-

nm

Range of spectral bandwidth

-

440 to 800

-

nm

Collector emitter saturation voltage

-0.1

-

V

TYPE DEDICATED CHARACTERISTICS

PARAMETER

TEST CONDITION

BINNED GROUP

SYMBOL

MIN.

MAX.

UNIT

Photo current

CIE illuminant A,

15

28.4

μA

23.5

44.6

μA

36.9

70

μA