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USF10J48 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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USF10J48 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page  SF10G48,SF10J48,USF10G48,USF10J48 2001-07-10 2 MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT SF10G48 USF10G48 400 Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage SF10J48 USF10J48 VDRM VRRM 600 V SF10G48 USF10G48 500 Non−Repetitive Peak Reverse Voltage (Non−Repetitive <5ms, Tj = 0~125°C) SF10J48 USF10J48 VRSM 720 V Average On−State Current IT (AV) 10 A R.M.S On−State Current IT (RMS) 16 A 160 (50Hz) Peak One Cycle Surge On−State Current (Non-Repetitive) ITSM 176 (60Hz) A I 2 t Limit Value I 2 t 125 A 2 s Critical Rate of Rise of On−State Current (Note 1) di / dt 100 A / µs Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Forward Gate Voltage VFGM 10 V Peak Reverse Gate Voltage VRGM −5 V Peak Forward Gate Current IGM 2 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Note 1: VDRM = 0.5 × Rated, ITM ≤ 30A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current and Repetitive Peak Reverse Current IDRM IRRM VDRM = VRRM = Rated ― ― 10 µA Peak On−State Voltage VTM ITM = 30A ― 1.5 V Gate Trigger Voltage VGT ― ― 1.0 V Gate Trigger Current IGT VD = 6V, RL = 10Ω ― ― 10 mA Gate Non−Trigger Voltage VGD VD = Rated × 2 / 3, Tc = 125°C 0.2 ― ― V Critical Rate of Rise of Off−State Voltage dv /dt VDRM = Rated, Tc = 125°C Exponential Rise ― 50 ― V / µs Holding Current IH VD = 6V, ITM = 1A ― ― 40 mA Latching Current IL VD = 6V, f = 50Hz tgw = 50µs, iG = 30mA ― ― 50 mA Thermal Resistance Rth (j−c) Junction to Case, DC ― ― 2.5 °C / W |
Similar Part No. - USF10J48 |
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Similar Description - USF10J48 |
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