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PH2625L Datasheet(PDF) 6 Page - NXP Semiconductors |
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PH2625L Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page 9397 750 14324 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Preliminary data sheet Rev. 02 — 24 February 2005 6 of 13 Philips Semiconductors PH2625L N-channel TrenchMOS™ logic level FET Tj =25 °CTj =25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values Tj =25 °C and 150 °C; VDS >ID × RDSon Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa553 0 10 20 30 40 0 0.5 1 1.5 2 VDS (V) ID (A) 1.7 1.8 10 1.9 2.2 4.5 2.5 2.1 2.4 2.3 VGS (V) = 003aaa555 0 5 10 15 20 010 20 30 40 ID (A) RDSon (m Ω) 10 2.1 2.3 4.5 2.2 VGS (V) = 2 003aaa554 0 10 20 30 40 0 1 23 VGS (V) ID (A) 25 °C Tj = 150 °C 03af18 0 0.5 1 1.5 2 -60 0 60 120 180 Tj ( °C) a a R DSon R DSon 25 C ° () ------------------------------ = |
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