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EC747N60AR Datasheet(PDF) 3 Page - E-CMOS Corporation |
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EC747N60AR Datasheet(HTML) 3 Page - E-CMOS Corporation |
3 / 5 page EC747N60 600V,7A N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 4J09N-Rev.F001 IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 7 A ISM Miximum Pulsed Current VGS = 0V - - 28 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 7A - 0.79 1.5 V trr Reverse Recovery time VGS = 0V, IS = 7A, di/dt = 100A/µs - 325 - ns Qrr Reverse Recovery Charge - 2.5 - µC ■ Drain-Source Diode Characteristics Notes : a. TJ = +25 ℃ to +150 ℃. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD< 7.0A di/dt < 100 A/µs, VDD < BVDSS, T J < +150 ℃ d. Pulse width < 300 µs; duty cycle < 2%. e. L=10mH, VDD =50V, ID=6.0A, RG =25Ω Starting TJ =25 ℃.. ORDERING INFORMATION Square Pulse Duration (sec) for EC747N60AF Figure 1. Normalized Effective Transient Thermal Impedance With Pulse Duration Part Number Package Marking Marking Information EC747N60AFR TO-220F-3L 747N60 LLLLL YYWW 1. LLLLL:Lot No. 2. YY:Year code 3. WW:Week code EC747N60AR TO-220-3L EC747N60A9R TO-263-3L |
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