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EC747N65 Datasheet(PDF) 3 Page - E-CMOS Corporation |
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EC747N65 Datasheet(HTML) 3 Page - E-CMOS Corporation |
3 / 6 page EC747N65 650V,7A N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 6 4J06N-Rev.F001 IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 7.0 A ISM Miximum Pulsed Current VGS = 0V - - 28 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =3.5A - - 1.5 V ■ Drain-Source Diode Characteristics Notes : a. TJ = +25 C to +150 C. b. Repetitive rating; pulse width limited by maximum junction temperature. c. L=10mH, VDD =50V, IAS =9A, RG =25Ω Starting TJ =25 ℃. d. Pulse width≦ 300 μs; duty cycle≦ 2%. ORDERING INFORMATION Part Number Package Marking Marking Information EC747N65AFR TO-220F-3L 747N65 LLLLL YYWW 1. LLLLL:Lot No. 2. YY:Year code 3. WW:Week code EC747N65AR TO-220-3L EC747N65A9R TO-263-3L |
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