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EC745N65AFR Datasheet(PDF) 2 Page - E-CMOS Corporation |
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EC745N65AFR Datasheet(HTML) 2 Page - E-CMOS Corporation |
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2 / 5 page  EC745N65 650V,5A N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 5 4J06N-Rev.F001 Symbol Parameter Test Condition Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 650 - - V IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 20 μ A IGSSF Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA IGSSR Reverse Gate Body Leakage Current VDS = 0V, VGS = -30V - - -100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 2.0 2.91 4.0 V RDS(on) Static Drain-Source On-Resistance d VGS = 10V, ID = 3A - 1.8 2.3 Ω gFS Forward Transconductance d VDS = 15V, ID = 2.5A - 2.2 10 S Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 796 - pF Coss Output Capacitance - 99 - pF Crss Reverse Transfer Capacitance - 24 - pF td(on) Turn-On Delay Time VDD = 325V, ID = 5A, RG = 10Ω, VGS = 10V - 25 - ns tr Turn-On Rise Time - 8.1 - ns td(off) Turn-Off Delay Time - 37 - ns tf Turn-Off Fall Time - 6.7 - ns Qg Total Gate Charge VDS = 325V, ID = 5A, VGS = 10V - 18.6 nC Qgs Gate-Source Charge - 5.6 nC Qgd Gate-Drain Charge - 7.8 nC Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics ■ On Characteristics ■ Dynamic Characteristics ■ Switching Characteristics |
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