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EC745N65AFR Datasheet(PDF) 1 Page - E-CMOS Corporation

Part # EC745N65AFR
Description  650V,5A N-Channel Power MOSFET
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC745N65AFR Datasheet(HTML) 1 Page - E-CMOS Corporation

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EC745N65
650V,5A N-Channel Power MOSFET
C
o
n
v
e
r
t
e
r
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
4J06N-Rev.F001
Symbol
Parameter
Limit
Unit
TO-220
TO-220F
VDS
Drain-Source Voltage
a
650
V
VGS
Gate-Source Voltage
 30
V
ID
Drain Current-Continuous, TC =25℃
5
A
Drain Current-Continuous, TC =100 ℃
3
A
IDM
Drain Current-Pulsed
b
20
A
PD
Maximum Power Dissipation @ TJ =25 ℃
104
35
W
EAS
Single Pulsed Avalanche Energy
e
143
mJ
dv/dt
Peak Diode Recovery dv/dt
c
4.5
V/ns
TJ, TSTG
Operating and Store Temperature Range
-55 to 150
℃
Symbol
Parameter
Value
Unit
R
JC
Thermal Resistance, Junction-Case Max.
1.2
3.6
℃/W
R
JA
Thermal Resistance, Junction-Ambient Max.
63
℃/W
Features
◆ 650V, 5A, RDS(ON)(Max.) = 2.3Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Charger
STB
Open Framed Power Supply
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Thermal Characteristics


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