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EC745N65AFR Datasheet(PDF) 1 Page - E-CMOS Corporation |
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EC745N65AFR Datasheet(HTML) 1 Page - E-CMOS Corporation |
1 / 5 page EC745N65 650V,5A N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 5 4J06N-Rev.F001 Symbol Parameter Limit Unit TO-220 TO-220F VDS Drain-Source Voltage a 650 V VGS Gate-Source Voltage 30 V ID Drain Current-Continuous, TC =25℃ 5 A Drain Current-Continuous, TC =100 ℃ 3 A IDM Drain Current-Pulsed b 20 A PD Maximum Power Dissipation @ TJ =25 ℃ 104 35 W EAS Single Pulsed Avalanche Energy e 143 mJ dv/dt Peak Diode Recovery dv/dt c 4.5 V/ns TJ, TSTG Operating and Store Temperature Range -55 to 150 ℃ Symbol Parameter Value Unit R JC Thermal Resistance, Junction-Case Max. 1.2 3.6 ℃/W R JA Thermal Resistance, Junction-Ambient Max. 63 ℃/W Features ◆ 650V, 5A, RDS(ON)(Max.) = 2.3Ω @ VGS = 10V ◆ Low Crss ◆ Fast Switching ◆ 100 % Avalanche Tested Applications Charger STB Open Framed Power Supply Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Thermal Characteristics |
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