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EC744N65 Datasheet(PDF) 3 Page - E-CMOS Corporation |
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EC744N65 Datasheet(HTML) 3 Page - E-CMOS Corporation |
3 / 5 page EC744N65 650V,5.5A N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 5 4J06N-Rev.F001 IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 3.7 A ISM Maximum Pulsed Current VGS =0V - - 14.8 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 3.7A - 0.86 1.5 V ■ Drain-Source Diode Characteristics Notes : a. TJ = +25 ℃ to +150 ℃. b. Repetitive rating; pulse width limited by maximum junction temperature. c. ISD= 3.7A di/dt≦ 100 A/μs, VDD≦ BVDSS, TJ ≦ +150 ℃. d. Pulse width≦ 38 0 μs; duty cycle≦ 2%. e. L=10mH, VDD =90V, IAS =3.7A, RG =25Ω Starting TJ =150 ℃. Figure3 Maximum Safe Operating Area Figure 2. Normalized On-Resistance Variation with Temperature Figure 1 . Normalized Effective Transient Thermal Impedance With Pulse Duration |
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