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EC734N60 Datasheet(PDF) 2 Page - E-CMOS Corporation |
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EC734N60 Datasheet(HTML) 2 Page - E-CMOS Corporation |
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2 / 6 page  EC734N60 N-Channel Power MOSFET C o n v e r t e r E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 6 4G22N-Rev.F001 Symbol Parameter Test Condition Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μ A 600 - - V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 μ A IGSSF Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA IGSSR Reverse Gate Body Leakage Current VDS = 0V, VGS = -30V - - -100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 2 2.62 4 V RDS(on) Static Drain-Source On-Resistance d VGS = 10V, ID = 2A - 1.91 2.4 Ω gFS Forward Transconductance d VDS = 15V, ID = 2A - 2.3 10 S Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 464 - pF Coss Output Capacitance - 87 - pF Crss Reverse Transfer Capacitance - 16 - pF td(on) Turn-On Delay Time VDD = 300V, ID = 4A, RG = 10Ω, VGS = 10V - 21.1 - ns tr Turn-On Rise Time - 7.5 - ns td(off) Turn-Off Delay Time - 29.1 - ns tf Turn-Off Fall Time - 6.3 - ns Qg Total Gate Charge VDS = 300V, ID = 4A, VGS = 10V - 8.4 - nC Qgs Gate-Source Charge - 3.2 - nC Qgd Gate-Drain Charge - 2.8 - nC Electrical Characteristics( TJ = 25°C unless otherwise noted) ■ Off Characteristics ■ On Characteristics ■ Dynamic Characteristics ■ Switching Characteristics |
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Similar Description - EC734N60 |
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