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EC76P4KE11A Datasheet(PDF) 1 Page - E-CMOS Corporation

Part # EC76P4KE11A
Description  Peak Pulse 400W Stand-off Voltage 6.8 to 550V
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC76P4KE11A Datasheet(HTML) 1 Page - E-CMOS Corporation

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EC76P4KEXXX
Peak Pulse 400W
Stand-off Voltage 6.8 to 550V
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
5A19N Rev.F001
Features
■ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
■ Class passivated junction
■ 400W peak pulse power capability on 10/1000us
Waveform, repetition rate (duty cycle): 0.01%
■ Excellent clamping capability
■ Low incremental surge resistance
■ Very fast response soldering guaranteed: 265
/10
Seconds, 0.375”(9.5mm) lead length, 5lbs. (2.3kg)
tension
Mechanical Date
■ Case : JEDEC DO-204AL(DO-41) molded plastic
Body over passivated junction
■ Terminals: Axial leads, solderable per MIL-STD-750,
Method 2026
■ Polarity: For unidirectional types the color band
denotes the cathode, which is positive with respect
to the anode under normal TVS operation
■ Mounting Position: Any
■ Weight : 0.012oz, 0.3g
Absolute Maximum Ratings
(Ratings at 25℃ambient temperature unless otherwise specified.)
Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig. 2.
2. Mounted on 1.6 x 1.6" (40 x 40 mm) per Fig. 5.
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
maximum
4. VF=3.5 V for devices of V(BR) < 220V, and VF=5.0 Volt max. for devices of V(BR)>220V
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a 10/1000 us waveform
(1,2) (see Fig. 1)
PPPM
400
W
Peak pulse current with a 10/1000 us waveform
(1)
IPPM
See Next Table
A
Steady state power dissipation
at TL =75
, lead lengths 0.375" (9.5mm)
(2)
PM(AV)
1.0
W
Peak forward surge current 8.3ms single half sine-wave uni-directional only
(3)
IFSM
40
A
Maximum instantaneous forward voltage @ 25A for unidirectional only
(4)
VF
3.5/5.0
V
Typical thermal resistance, junction to ambient, LLead =10mm
RθJA
100
℃/W
Typical thermal resistance, junction to lead
RθJL
60
℃/W
Operating junction and storage temperature range
TJ,TSTG
-55 to +175
EC76P4KE6.8 thru 550


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