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MBR860G Datasheet(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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MBR860G Datasheet(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
1 / 2 page 28 31 35 42 56 70 105 140 V 40 45 50 60 80 100 150 200 V 0.85 0.92 = 8A V MBR840G-MBR8200G 1 of 2 °C/W pF 0.60 V 880G Characteristic Symbol 8.0 A SCHOTTKY BARRIER DIODE Features Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current @TL = 75° C (Note 1) IO 8. 0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM A Forward Voltage @IF FM Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.1 20 mA Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 1) RJA Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 840G 850G 860G 8100G Units 0.70 350 280 200 15 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 8200G 150 845G MBR840G-MBR8200G -55 to +125 TO-263/D PAK e: TO-263/D PAK, Molded Plastic Mounting Position: Any Polarity: See Diagram erminals: Plated Leads Solderable per Cas Classification Rating 94V-O Plastic Case Material has UL Flammability Guard Ring Die Construction For Use in Low Voltage Application Low Power Loss, High Efficiency Ideally Suited for Automatic Assembly Mechanical Data ! ! T MIL-STD-202, Method 208 ! ! ! Lead Free: For RoHS / Lead Free Version ! Schottky Barrier Chip ! ! ! ! ! 2 2 MBR MBR MBR MBR MBR MBR MBR MBR 8150G Alldatasheet |
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