28

31

35

42

56

70

105

140

V

40

45

50

60

80

100

150

200

V

0.85

0.92

= 8A

V

MBR840G-MBR8200G

1 of 2

°C/W

pF

0.60

V

880G

Characteristic

Symbol

8.0 A SCHOTTKY BARRIER DIODE

Features

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

8. 0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

A

Forward Voltage

FM

Peak Reverse Current

At Rated DC Blocking Voltage

0.1

20

mA

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

-55 to +150

°C

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

840G

850G

860G

8100G

Units

0.70

350

280

200

15

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

8200G

150

845G

MBR840G-MBR8200G

-55 to +125

TO-263/D PAK

e: TO-263/D PAK, Molded Plastic

Mounting Position: Any

Polarity: See Diagram

erminals: Plated Leads Solderable per

Cas

Classification Rating 94V-O

Plastic Case Material has UL Flammability

Guard Ring Die Construction

For Use in Low Voltage Application

Low Power Loss, High Efficiency

Ideally Suited for Automatic Assembly

Mechanical Data

!

!

T

MIL-STD-202, Method 208

!

!

!

Lead Free: For RoHS / Lead Free Version

!

Schottky Barrier Chip

!

!

!

!

!

2

2

MBR

MBR

MBR

MBR

MBR

MBR

MBR

MBR

8150G

Alldatasheet