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MC74HC273 Datasheet(PDF) 3 Page - ON Semiconductor |
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MC74HC273 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 8 page MC74HC273A http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Unit v 125_C v 85_C – 55 to 25 _C VCC V Test Conditions Parameter Symbol Iin Maximum Input Leakage Current Vin = VCC or GND 6.0 ± 0.1 ± 1.0 ± 1.0 µA IOZ Maximum Three–State Leakage Current Output in High–Impedance State Vin = VIL or VIH Vout = VCC or GND 6.0 ± 0.5 ± 5.0 ± 10 µA ICC Maximum Quiescent Supply Current (per Package) Vin = VCC or GND Iout = 0 µA 6.0 4.0 40 160 µA NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns) Guaranteed Limit Symbol Parameter VCC V – 55 to 25 _C v 85_C v 125_C Unit fmax Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 4) 2.0 3.0 4.5 6.0 6.0 15 30 35 5.0 10 24 28 4.0 8.0 20 24 MHz tPLH tPHL Maximum Propagation Delay, Clock to Q (Figures 1 and 4) 2.0 3.0 4.5 6.0 145 90 29 25 180 120 36 31 220 140 44 38 ns tPHL Maximum Propagation Delay, Reset to Q (Figures 2 and 4) 2.0 3.0 4.5 6.0 145 90 29 25 180 120 36 31 220 140 44 38 ns tTLH tTHL Maximum Output Transition Time, Any Output (Figures 1 and 4) 2.0 3.0 4.5 6.0 75 27 15 13 95 32 19 16 110 36 22 19 ns Cin Maximum Input Capacitance 10 10 10 pF NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). Typical @ 25 °C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Enabled Output)* 48 pF * Used to determine the no–load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D). |
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