6

TPS63710

SLVSD44 – SEPTEMBER 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

This specification applies after there has been a high to low transition on EN. If EN is low while the supply voltage is applied, the

shutdown current can be up to 90µA.

(2)

Please see the application section for how to set the output voltage.

(3)

6.5 Electrical Characteristics

otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY

Quiescent supply current

15

mA

Shutdown supply current

(1)

5

25

μA

Shutdown supply current

(1)

55

μA

Undervoltage lockout threshold

2.55

2.6

2.7

V

Undervoltage lockout hysteresis

250

350

mV

Thermal shutdown temperature

Junction temperature rising

160

°C

Thermal shutdown hysteresis

Junction temperature falling

20

°C

CONTROL (EN, PG)

High level input voltage for EN

1

14

V

Low level input voltage for EN

0.4

V

Input current for EN

EN = high

0.01

0.1

μA

Input resistance for EN

EN = low

400

kΩ

PG de-glitch time

rising or falling

10

µs

PG output low voltage

0.07

0.3

V

Input leakage current (PG)

100

nA

Voltage at VAUX

4.6

V

Current drawn from VAUX

0

100

μA

POWER SWITCH

Switch current limit (LSD)

4 V

1.4

2.1

3

A

Switch current limit (LSD)

0.8

A

Switch on-resistance

80

130

m

Ω

120

190

40

80

Maximum duty cycle

at SW pin

70%

Minimum on-time

130

ns

Switching frequency

1400

1500

1600

kHz

OUTPUT

Output voltage range

-5.5

-1

V

FB regulation voltage

V

-1.5%

1.5%

-2%

1.5%

Feedback input bias current

2

100

nA

Discharge resistance from pin VOUT

to GND

EN = low

100

Ω

Line regulation

0.05

%/A

Load regulation

0.02

%/V

Start-up delay time from EN = high to

start switching

5

ms

Ramp time from start switching until

device has reached 95% of its

nominal output voltage

not in current limit during start-up

1

ms

55

100

145

µA