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THS3201 Datasheet(PDF) 4 Page - Texas Instruments |
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THS3201 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 28 page 4 THS3491 SBOS875 – AUGUST 2017 www.ti.com Product Folder Links: THS3491 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Stay below this dV/dT supply turn on and off edge rate to make sure that the edge-triggered ESD absorption device across the supply pins remains open. Exceeding this supply edge rate may transiently show a short circuit across the supplies. (3) Long-term continuous current for electro-migration limits. (4) Thermal shutdown at approximately 165°C junction temperature and recovery at approximately 145°C (5) See the MSL/Reflow Rating information provided with the material, or see the TI web site at www.ti.com for the latest information. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Voltage Supply voltage, (+VS) – (–VS) 33 V Supply voltage turn on, turn off maximum dV/dT(2) 1 V/µs Input/output voltage range (–VS) – 0.5 (+VS) + 0.5 V Differential input voltage ±0.5 Current Continuous input current(3) ±10 mA Continuous output current(3) ±100 Temperature Operating, TA TBD TBD °C Junction, TJ (4) Normal operation 150 Continuous operation, long-term reliability 125 Storage(5), Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT (+VS) – (–VS) Supply voltage Dual supply ±7 ±15 ±16 V Single supply 14 30 32 TA Operating free-air temperature –40 85 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) THS3491 UNIT DDA (SO PowerPAD™) RGT (VQFN With Thermal Pad) 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 44.5 49.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66.8 55.4 °C/W RθJB Junction-to-board thermal resistance 19.2 23.1 °C/W ψJT Junction-to-top characterization parameter 6.4 1.8 °C/W ψJB Junction-to-board characterization parameter 19.5 23.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 7.5 7.8 °C/W |
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