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DE275X2-501N16 Datasheet(PDF) 3 Page - IXYS Corporation |
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DE275X2-501N16 Datasheet(HTML) 3 Page - IXYS Corporation |
3 / 3 page DE275X2-501N16A RF Power MOSFET Directed Energy, Inc. An IXYS Company 501N16A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer ca- pacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: SYM=POWMOSN .SUBCKT 501N16A 10 20 30 * TERMINALS: D G S * 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET * REVA 6-15-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .2 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.0N RD 4 1 .5 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M) .MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M) .ENDS Directed Energy, Inc. An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com Doc #9200-0245 Rev 1 © 2001 Directed Energy, Inc. 56 7 8 4 10 DRAIN 30 SOURCE 20 GATE Don Dcos D2crs D1crs Rds Ron Doff Roff Rd Lg Ld Ls M3 2 |
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