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DE275-501N16 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. DE275-501N16
Description  RF Power MOSFET
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Maker  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
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DE275-501N16A
RF Power MOSFET
Directed Energy, Inc.
An
IXYS Company
Preliminary Data Sheet
VDSS
=
500 V
ID25
=
16 A
RDS(on)
=
.5
PDHS
=
375 W
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 M
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
Tc = 25°C
16
A
IDM
Tc = 25°C, pulse width limited by TJM
98
A
IAR
Tc = 25°C
16
A
EAR
Tc = 25°C
20
mJ
IS
≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj
≤ 150°C, RG = 0.2Ω
5
V/ns
IS = 0
>200
V/ns
PDHS
Tc = 25°C
Derate 3.0W/°C above 25°C
375
W
PDAMB
Tc = 25°C
3.0
W
TJ
-55…+150
°C
TJM
150
°C
Tstg
-55…+150
°C
TL
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
2
g
dv/dt
RthJHS
0.33
K/W
Symbol
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ.
max.
VDSS
VGS = 0 V, ID = 3 ma
500
V
VGS(th)
VDS = VGS, ID = 4 ma
2.5
5.5
V
IGSS
VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50
1
µA
mA
RDS(on)
.5
gfs
VDS = 15 V, ID = 0.5ID25, pulse test
2
6
S
VGS = 15 V, ID = 0.5ID25
Pulse test, t
≤ 300µS, duty cycle d ≤ 2%
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 100MHz
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DRAIN
SG1
SG2
GATE
SD1
SD2




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