128K x 16 Static RAM
CY62136CV18 MoBL2™
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05016 Rev. *C
Revised August 30, 2002
Features
• High Speed
— 55 ns and 70 ns availability
• Low voltage range:
— 1.65V
−1.95V
• Pin Compatible with CY62136BV18
• Ultra-low active power
— Typical Active Current: 0.5 mA @ f = 1 MHz
— Typical Active Current: 1.5 mA @ f = fmax (70 ns
speed)
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The CY62136CV18 is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features ad-
vanced circuit design to provide ultra-low active current. This
is ideal for providing More Battery Life® (MoBL™) in portable
applications such as cellular telephones. The device also has
an automatic power-down feature that significantly reduces
power consumption by 99% when addresses are not toggling.
The device can also be put into standby mode when deselect-
ed (CE HIGH). The input/output pins (I/O0 through I/O15) are
placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), both Byte High En-
able and Byte Low Enable are disabled (BHE, BLE HIGH), or
during a write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A16). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O0 to I/O7. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O8 to I/O15. See the
Truth Table at the back of this data sheet for a complete de-
scription of read and write modes.
The CY62136CV18 is available in 48-ball FBGA packaging.
Logic Block Diagram
128K x 16
RAM Array
I/O0–I/O7
COLUMN DECODER
2048 X 1024
DATA IN DRIVERS
OE
I/O8–I/O15
CE
WE
BLE
BHE
A7
A6
A3
A0
A2
A1
A5
A4
A8
A9
A10
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