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BQ7790400PWR Datasheet(PDF) 8 Page - Texas Instruments |
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BQ7790400PWR Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 47 page  8 bq77904, bq77905 SLUSCM3G – JUNE 2016 – REVISED SEPTEMBER 2017 www.ti.com Product Folder Links: bq77904 bq77905 Submit Documentation Feedback Copyright © 2016–2017, Texas Instruments Incorporated Electrical Characteristics (continued) Typical values stated at TA = 25ºC and VDD = 16 V (bq77904) or 20 V (bq77905). MIN and MAX values stated with TA = –40ºC to +85ºC and VDD = 3 to 20 V (bq77904) or VDD = 3 to 25 V (bq77905) unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VOTC Overtemperature in charge programmable threshold Threshold for 45°C(1) 32.14 32.94 34.54 %VTB Threshold for 50°C(1) 29.15 29.38 31.45 %VTB VOTC(REC) Overtemperature in charge recovery Recovery threshold at 35°C when VOTD is at 45°C (1) 38.63 40.97 40.99 %VTB Recovery threshold at 40°C when VOTD is at 50°C (1) 36.18 36.82 38.47 %VTB VUTD Undertemperature in discharge programmable threshold Threshold for –20°C(1) 86.41 87.14 89.72 %VTB Threshold for –10°C(1) 80.04 80.94 83.10 %VTB VUTD(REC) Undertemperature in discharge recovery Recovery threshold at –10°C when VUTD is at –20°C (1) 80.04 80.94 83.10 %VTB Recovery threshold at 0°C when VUTD is at –10°C (1) 71.70 73.18 74.86 %VTB VUTC Undertemperature in charge programmable threshold Threshold for –5°C(1) 75.06 77.22 78.32 %VTB Threshold for 0°C(1) 71.70 73.18 74.86 %VTB VUTC(REC) Undertemperature in Charge Recovery Recovery threshold at 5°C when VUTC is at –5°C (1) 68.80 69.73 71.71 %VTB Recovery threshold at 10°C when VUTC is at 0°C (1) 64.67 65.52 67.46 %VTB VOCD1 Overcurrent discharge 1 programmable threshold range, (VSRP – VSRN) –85 –10 mV VOCD2 Overcurrent discharge 2 programmable threshold range, (VSRP – VSRN) –20 –170 mV VSCD Short circuit discharge programmable threshold range, (VSRP – VSRN) –40 –340 mV VCCAL OCD1 detection accuracy at lower thresholds VOCD1 > –20 mV –30% 30% VCCAH OCD1, OCD2, SCD detection accuracy VOCD1 ≤ –20 mV; all OCD2 and SCD threshold ranges –20% 20% VOW Open-wire fault voltage threshold at VCx per cell with respect to VCx-1 Voltage falling on VCx, 3.6 V to 0 V 450 500 550 mV VOW(HYS) Hysteresis for open wire fault Voltage rising on VCx, 0 V to 3.6 V 100 mV CHARGE AND DISCHARGE FET DRIVERS V(FETON) CHG/CHGU/DSG on VDD ≥ 12 V, CL = 10 nF 11 12 14 V VDD < 12 V, CL = 10 nF VDD - 1 VDD V V(FETOFF) CHG/CHGU/DSG off No load when CHG/CHGU/DSG is off 0.5 V R(CHGOFF) CHG off resistance CHG off for > tCHGPDN and pin held at 2V 0.5 k Ω R(DSGOFF) CHGU/DSG off resistance CHGU/DSG off and pin held at 2V 10 16 Ω ICHG(CLAMP) CHG clamp current CHG off and pin held at 18 V 450 µA VCHG(CLAMP) CHG clamp voltage ICHG(CLAMP) = 300 µA 16 18 20.5 V tCHGON CHG on rise time CL = 10 nF, 10% to 90% 50 150 µs tDSGON CHGU/DSG on rise time CL = 10 nF, 10% to 90% 2 75 µs tCHGOFF CHG off fall time CL = 10 nF, 90% to 10% 15 30 µs tDSGOFF CHGU/DSG off fall time CL = 10 nF, 90% to 10% 5 15 µs CTRC AND CTRD CONTROL VCTR1 Enable FET driver (VSS) With respect to VSS. Enabled < MAX 0.6 V |
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