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BQ25600CYFFT Datasheet(PDF) 11 Page - Texas Instruments

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Part # BQ25600CYFFT
Description  I2C Controlled 3.0-A Single Cell Battery Charger for Parallel Charging Applications
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

BQ25600CYFFT Datasheet(HTML) 11 Page - Texas Instruments

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11
bq25600C
www.ti.com
SLUSD36 – SEPTEMBER 2017
Product Folder Links: bq25600C
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Copyright © 2017, Texas Instruments Incorporated
Electrical Characteristics (continued)
VVAC_UVLOZ < VVAC < VVAC_OV and VVAC > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(1)
Specified by design. Not production tested.
THERMAL REGULATION AND THERMAL SHUTDOWN
TJUNCTION_REG
Junction Temperature Regulation
Threshold
Temperature Increasing, TREG
(REG05[1] = 1) = 110
110
°C
TJUNCTION_REG
Junction Temperature Regulation
Threshold
Temperature Increasing, TREG
(REG05[1] = 0) = 90
90
°C
TSHUT
Thermal Shutdown Rising
Temperature
Temperature Increasing
160
°C
TSHUT_HYST
Thermal Shutdown Hysteresis
30
°C
CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
IBATFET_OCP
System over load threshold
6.0
A
PWM
fSW
PWM switching frequency
Oscillator frequency, buck mode
1320
1500
1680
kHz
DMAX
Maximum PWM duty cycle(1)
97%
REGN LDO
VREGN
REGN LDO output voltage
VVBUS = 9V, IREGN = 40mA
5.6
6
6.65
V
VREGN
REGN LDO output voltage
VVBUS = 5V, IREGN = 20mA
4.58
4.7
4.8
V
LOGIC I/O PIN CHARACTERISTICS (CE, PSEL, SCL, SDA,, INT)
VILO
Input low threshold CE
0.4
V
VIH
Input high threshold CE
1.3
V
IBIAS
High-level leakage current CE
Pull up rail 1.8 V
1
µA
VILO
Input low threshold PSEL
0.4
V
VIH
Input high threshold PSEL
1.3
V
IBIAS
High-level leakage current PSEL
Pull up rail 1.8V
1
µA
LOGIC I/O PIN CHARACTERISTICS (PG, STAT)
VOL
Low-level output voltage
0.4
V


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