SGF9

No.0000-1/8

Features

•

Mold package-owing to the cross-mold technology,

this product can maintain the same performance as

the ceramic package.

•

The chip surface is covered

with the highly reliable protection film.

•

Automatic surface mounting is available.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN*0000

SGF9

Package Dimensions

unit : mm

0000

[SGF9]

40901 TS IM hirata

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

N-Channel GaAs MESFET

For C to X-band Local Oscillator and Amplifier

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDS

6.0

V

Gate-to-Source Voltage

VGS

--5.0

V

Drain Current

ID

100

mA

Allowable Power Dissipation

PD

130

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gate-to-Source Leak Current

V(BR)GSO

IGS=--10µA

--5.0

V

Saturated Drain Current

IDSS

VDS=3V, VGS=0

30

40

70

mA

Gate-to-Source Cutoff Voltage

VGS(off)

VDS=3V, ID=100µA

--0.5

--5.0

V

Forward Transfer Admittance

yfs

VDS=3V, ID=10mA

20

35

mS

Continued on next page.

Preliminary

2

1

2

3

0.4

(0.9

±0.05)

4.1

±0.02

±0.1

1 : Drain

2 : Source

3 : Gate