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SGF9 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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SGF9 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 8 page SGF9 No.0000-1/8 Features • Mold package-owing to the cross-mold technology, this product can maintain the same performance as the ceramic package. • The chip surface is covered with the highly reliable protection film. • Automatic surface mounting is available. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN*0000 SGF9 Package Dimensions unit : mm 0000 [SGF9] 40901 TS IM hirata Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-Channel GaAs MESFET For C to X-band Local Oscillator and Amplifier Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 6.0 V Gate-to-Source Voltage VGS --5.0 V Drain Current ID 100 mA Allowable Power Dissipation PD 130 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Gate-to-Source Leak Current V(BR)GSO IGS=--10µA --5.0 V Saturated Drain Current IDSS VDS=3V, VGS=0 30 40 70 mA Gate-to-Source Cutoff Voltage VGS(off) VDS=3V, ID=100µA --0.5 --5.0 V Forward Transfer Admittance yfs VDS=3V, ID=10mA 20 35 mS Continued on next page. Preliminary 2 1 2 3 0.4 (0.9 ±0.05) 4.1 ±0.02 ±0.1 1 : Drain 2 : Source 3 : Gate |
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