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TSFF5410 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSFF5410
Description  High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5410 Datasheet(HTML) 2 Page - Vishay Siliconix

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TSFF5410
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
2
Document Number: 81091
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
Soldering temperature
t
 5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
0
20
40
60
80
100
120
140
160
180
200
0
1020
3040506070
8090 100
21142
T
amb - Ambient Temperature (°C)
R
thJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
T
amb - Ambient Temperature (°C)
21143
R
thJA = 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1 A, tp = 100 μs
VF
2.3
3
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
125
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
45
70
135
mW/sr
IF = 1 A, tp = 100 μs
Ie
700
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
e
50
mW
Temperature coefficient of
e
IF = 100 mA
TK
e
- 0.35
%/K
Angle of half intensity
± 22
deg
Peak wavelength
IF = 100 mA
p
870
nm
Spectral bandwidth
IF = 100 mA

40
nm
Temperature coefficient of
p
IF = 100 mA
TK
p
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
Virtual source diameter
d
2.1
mm


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