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TSFF5410 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TSFF5410 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page TSFF5410 www.vishay.com Vishay Semiconductors Rev. 1.8, 24-Aug-11 2 Document Number: 81091 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 0 20 40 60 80 100 120 140 160 180 200 0 1020 3040506070 8090 100 21142 T amb - Ambient Temperature (°C) R thJA = 230 K/W 0 20 40 60 80 100 120 0 10 203040 50607080 90 100 T amb - Ambient Temperature (°C) 21143 R thJA = 230 K/W BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms VF 1.5 1.8 V IF = 1 A, tp = 100 μs VF 2.3 3 V Temperature coefficient of VF IF = 1 mA TKVF - 1.8 mV/K Reverse current VR = 5 V IR 10 μA Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 125 pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 45 70 135 mW/sr IF = 1 A, tp = 100 μs Ie 700 mW/sr Radiant power IF = 100 mA, tp = 20 ms e 50 mW Temperature coefficient of e IF = 100 mA TK e - 0.35 %/K Angle of half intensity ± 22 deg Peak wavelength IF = 100 mA p 870 nm Spectral bandwidth IF = 100 mA 40 nm Temperature coefficient of p IF = 100 mA TK p 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns Cut-off frequency IDC = 70 mA, IAC = 30 mA pp fc 24 MHz Virtual source diameter d 2.1 mm |
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