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AM4832N Datasheet(PDF) 1 Page - Analog Power |
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AM4832N Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM4832N N-Channel 30-V (D-S) MOSFET VDS (V) ID (A) 26 23 Symbol Limit Units VDS 30 VGS ±20 TA=25°C 26 TA=70°C 22 IDM 100 IS 5 A TA=25°C 3.1 TA=70°C 2.2 TJ, Tstg -55 to 150 °C Symbol Maximum Units 40 80 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Gate-Source Voltage PRODUCT SUMMARY 30 rDS(on) (mΩ) 3.2 @ VGS = 10V 4.2 @ VGS = 4.5V Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • DC/DC Conversion • Power Routing • Motor Drives © Preliminary 1 Publication Order Number: DS_AM4832N_1A |
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