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ABU2518 Datasheet(PDF) 3 Page - Advanced Semiconductor Business Inc. |
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ABU2518 Datasheet(HTML) 3 Page - Advanced Semiconductor Business Inc. |
3 / 12 page 3/12 ASB Inc. sales@asb.co.kr September 2017 ABU2518 2.3 Pin Configuration Pin Description Simplified Outline 1,4 RF_IN 1 2 3 4 5 6 7 8 2, 3, 6, 7 NC or GND 5, 8 RF_OUT & Bias 2.4 Absolute Maximum Ratings, TA = +25 C Parameters Max. Ratings Operating Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Device Current 360 mA Power Dissipation +1.8 W Junction Temperature +150 C Input RF Power (CW, 75 matched) +26 dBm Note: operation of this device in excess of any of these limits may cause permanent damage. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 32 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1A CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) |
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Similar Description - ABU2518 |
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