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ASB Inc.

 sales@asb.co.kr

September 2017

ABU2518

2.3

Pin Configuration

Pin

Description

Simplified Outline

1,4

RF_IN

1

2

3

4

5

6

7

8

2, 3, 6, 7

NC or GND

5, 8

RF_OUT & Bias

2.4

C

Parameters

Max. Ratings

Operating Case Temperature

-40 to

85 C

Storage Temperature

-40 to

150 C

Device Voltage

+6 V

Device Current

360 mA

Power Dissipation

+1.8 W

Junction Temperature

+150

C

Input RF Power (CW, 75

 matched)

+26 dBm

Note: operation of this device in excess of any of these limits may cause permanent damage.

2.5

Thermal Resistance

Symbol

Description

Typ

Unit

Thermal resistance from junction to lead

32

C/W

2.6

ESD Classification & Moisture Sensitivity Level

ESD Classification

HBM

Class 1A

CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can

be damaged by static electricity. Proper ESD control techniques should be used when

handling these devices.

Moisture Sensitivity Level

MSL 3 at 260

C reflow

(Intentionally Blanked)