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KSC2383L-R Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KSC2383L-R Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente KSC2383L 1A , 160V NPN Plastic Encapsulated Transistor 15-Sep -2014 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C E F D B G H J K 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Low collector to emitter saturation voltage VCE(sat). Audio power amplifier High Current CLASSIFICATION OF hFE Product-Rank KSC2383L-R KSC2383L-O KSC2383L-Y Range 60~120 100~200 160~320 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 160 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 6 V Continuous Collector Current IC 1 A Collector Power Dissipation PC 0.75 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 160 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 160 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=10µA, IC=0 Collector Cut - Off Current ICBO - - 1 µA VCB=150V, IE=0 Collector Cut - Off Current ICER - - 10 µA VCB=150V, REB=10M Emitter cut-off current IEBO - - 1 µA VEB=6V, IC=0 60 - 320 VCE=5V, IC=200mA DC Current Gain hFE 40 - - VCE=5V, IC=10mA Collector to Emitter Saturation Voltage VCE(sat) - - 1 V IC=500mA, IB=50mA Base – Emitter Voltage VBE - - 0.75 V VCE=5V, IC=5mA Transition Frequency fT - 20 - MHz VCE=5V, IC=200mA 1 1 1 1Emitter 2 2 2 2Collector 3 3 3 3Base Millimeter REF. Min. Max. A 4.70 5.10 B 7.80 8.20 C 13.80 14.20 D 3.70 4.10 E 0.35 0.55 F 0.35 0.45 G 1.27 TYP. H 1.28 1.58 J 2.44 2.64 K 0.60 0.80 TO-92L |
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