TSAL6102

www.vishay.com

Vishay Semiconductors

Rev. 1.0, 27-Aug-15

1

Document Number: 84337

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION

TSAL6102 is an infrared, 940 nm emitting diode in GaAlAs

multi quantum well (MQW) technology with high radiant

power and high speed molded in a blue-gray plastic

package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength:



• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

 = ± 10°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Material categorization: for definitions of compliance

APPLICATIONS

• Infrared

remote

control

units

with

high

power

requirements

• Free air transmission systems

• Infrared source for optical counters and card readers

• IR source for smoke detectors

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT

 (deg)



TSAL6102

220

± 10

940

15

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSAL6102

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1.5

A

Power dissipation

160

mW

Junction temperature

100

°C

Operating temperature range

-40 to +85

°C

Storage temperature range

-40 to +100

°C

Soldering temperature

t

 5 s, 2 mm from case

260

°C

Thermal resistance junction/ambient

J-STD-051, leads 7 mm soldered on PCB

230

K/W