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KBJ1002 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KBJ1002 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente KBJ10005 ~ KBJ1010 Voltage 50V ~ 1000V 10Amp Glass Passivated Bridge Rectifiers 25-Jun-2015 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Io : 10A VRRM : 50~1000V Glass passivated chip High surge forward current capability APPLICATIONS General purpose 1 phase Bridge rectifier applications MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Part Number Parameter Symbol KBJ 10005 KBJ 1001 KBJ 1002 KBJ 1004 KBJ 1006 KBJ 1008 KBJ 1010 Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V With heatsink TC =80°C 10 Average Rectified Output Current @ 60Hz sine wave, R-load Without heatsink TA =25°C IO 3.6 A Surge (Nonrepetitive) Forward Current @ 60HZ sine wave, 1 cycle, TJ=25°C IFSM 150 A Current Squared Time 1 I 2t 93 A 2S Dielectric Strength@ Terminals to case ,AC 1 minute VDIS 2 KV Mounting Torque@ Recommend torque : 5kg.cm Tor 8 Kg.cm Peak Forward Voltage@ IFM=5A, Pulse measurement, Rating of per diode VFM 1.1 V Peak Reverse Current@ VRM=VRRM , Pulse measurement, Rating of per diode IRRM 10 µA Without heatsink RθJA 25 Thermal Resistance With heatsink RθJC 2.3 °C / W Junction and Storage temperature range TJ,TSTG -55~+150 °C Notes: 1. 1ms≤t<8.3ms TJ=25°C ,Rating of per diode 4KBJ Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 24.7 25.3 J 0.6 0.8 B 14.7 15.3 K 7.3 7.7 C 4.4 4.8 L 1.7 2.1 D 17.0 18.0 M 2.0 TYP. E 3.0 x 45° N 1.05 1.45 F 3.1 3.4 P 3.3 3.8 G 4.0 Q 9.5 10.1 H 3.2 3.4 R 3.1 3.4 I 0.9 1.1 S 3.4 3.8 |
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