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IRFD120 Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part No. IRFD120
Description  1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ID, DRAIN CURRENT (A)
04
8
12
16
1
2
3
4
5
20
0
TJ = -55
oC
TJ = 25
oC
TJ = 125
oC
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
0
23
0.1
10
2
VSD, SOURCE TO DRAIN VOLTAGE (V)
102
1
5
5
2
4
TJ = 25
oC
TJ = 150
oC
2
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
QG, GATE CHARGE (nC)
04
6
10
5
15
20
ID = 5.2A
10
0
28
VDS = 80V
VDS = 50V
VDS = 20V
tP
VGS
0.01
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
IRFD120




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