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IRFD120 Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. IRFD120
Description  1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 4 page
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©2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
NOTE:
Heating effect of 2
µs pulse is minimal.
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves Unless Otherwise Specified (Continued)
0
1234
2
4
6
8
10
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = 9V
VGS = 4V
VGS = 5V
VGS = 6V
VGS = 10V
VGS = 8V
VGS = 7V
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
20
VGS, GATE TO SOURCE VOLTAGE (V)
16
12
8
0
8
6
4
2
010
4
TJ = 25
oC
TJ = 125
oC
TJ = -55
oC
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDS > ID(ON) x rDS(ON)MAX
0
0.4
0.8
10
20
30
ID, DRAIN CURRENT (A)
40
0
0.2
0.6
VGS = 10V
VGS = 20V
2
µs PULSE TEST
2.2
1.4
1.0
0.6
0.2
40
TJ, JUNCTION TEMPERATURE (
oC)
120
160
1.8
80
0
-40
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 0.6A
1.25
0.95
0.85
0.75
-40
TJ, JUNCTION TEMPERATURE (
oC)
160
1.05
1.15
040
80
120
IDS = 250µA
1000
200
0
0
20
50
600
VDS, DRAIN TO SOURCE VOLTAGE (V)
800
400
10
30
CISS
COSS
CRSS
40
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS
CDS + CGD
IRFD120




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