Electronic Components Datasheet Search
Selected language     English  ▼
Part Name
         Description


IRFD120 Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. IRFD120
Description  1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo 

   
 3 page
background image
©2002 Fairchild Semiconductor Corporation
IRFD120 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
ISD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Diode
-
-
1.3
A
Pulse Source to Drain Current
ISDM
-
-
5.2
A
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25
oC, I
SD = 1.3A, VGS = 0V (Figure 12)
-
-
2.5
V
Reverse Recovery Time
trr
TJ = 150
oC, I
SD = 1.3A, dISD/dt = 100A/µs
-
280
-
ns
Reverse Recovery Charge
QRR
TJ = 150
oC, I
SD = 1.3A, dISD/dt = 100A/µs
-
1.6
-
µC
NOTES:
2. Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%.
3. VDD = 25V, starting TJ = 25
oC, L = 32mH, R
G = 25Ω, peak IAS = 1.3A.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
TA, AMBIENT TEMPERATURE (
oC)
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
TA, AMBIENT TEMPERATURE (
oC)
50
75
100
25
150
1.5
1.2
0.9
0
0.6
0.3
125
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
100
0.1
10
0.1
0.01
10
LIMITED BY rDS(ON)
AREA MAY BE
OPERATION IN THIS
TJ = MAX RATED
1ms
10ms
100ms
100
µs
DC
1
0
10203040
4
8
12
16
20
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
VGS = 4V
VGS = 5V
VGS = 7V
PULSE DURATION = 80
µs
VGS = 10V
VGS = 8V
VGS = 6V
VGS = 9V
DUTY CYCLE = 0.5% MAX
IRFD120




Html Pages

1  2  3  4  5  6  7 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
IRFD1201.3A 100V 0.300 Ohm N-Channel Power MOSFET 1 2 3 4 5 MoreIntersil Corporation
IRFF1206.0A 100V 0.300 Ohm N-Channel Power MOSFET 1 2 3 4 5 MoreIntersil Corporation
HUF76609D310A 100V 0.165 Ohm N-Channel Logic Level UltraFET Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
HUFA76629D320A 100V 0.054 Ohm N-Channel Logic Level UltraFET Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor
HUF75631P333A 100V 0.040 Ohm N-Channel UltraFET Power MOSFET 1 2 3 4 5 MoreIntersil Corporation
IRF5105.6A 100V 0.540 Ohm N-Channel Power MOSFET 1 2 3 4 5 MoreIntersil Corporation
STB30NF10N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STD6NF10N-CHANNEL 100V - 0.22 ohm - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET 1 2 3 4 5 MoreSTMicroelectronics
STY140NS10N-CHANNEL 100V - 0.009 ohm - 140A MAX247™ MESH OVERLAY™ POWER MOSFET 1 2 3 4 5 MoreSTMicroelectronics
HUF76619D318A 100V 0.087 Ohm N-Channel Logic Level UltraFET Power MOSFET 1 2 3 4 5 MoreFairchild Semiconductor

Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl