M8050S datasheet(1/3 Pages) JIANGSU

Part #	M8050S

Description	TO-92 Plastic-Encapsulate Transistors

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

M8050S TRANSISTOR (NPN)

FEATURES

Power

Dissipation

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol Para

meter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

800

mA

PC

Collector Power Dissipation

625

mW

TJ

Junction Temperature

1

50

℃

Tstg

Storage Temperature

-55

~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

M

ax

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO*

IC= 1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100μA, IC=0

6

V

Collector cut-off current

ICBO

VCB= 35V, IE=0

0.1

μA

Collector cut-off current

ICEO

VCE= 20V, IB=0

0.1

μA

hFE(1)

VCE=1V, IC=5mA

45

hFE(2)

VCE=1V, IC=100mA

80

400

DC current gain

hFE(3)

VCE=1V, IC=800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC= 800mA, IB=80mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=800mA, IB= 80mA

1.2

V

Transition frequency

fT

VCE=6V, IC= 20mA , f=30MHz

150

MHz

* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.

TO-92

1.EMITTER

2.

COLLECTOR

3.

BASE

CLASSIFICATION OF hFE(2)

Rank

B

C

D

D3

Range

80-160

120-200

160-300

300-400

www.cj-elec.com

1

D,Dec,2015

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