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MMA3201D Datasheet(PDF) 11 Page - Motorola, Inc |
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MMA3201D Datasheet(HTML) 11 Page - Motorola, Inc |
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11 / 670 page  1–5 Motorola Sensor Device Data www.motorola.com/semiconductors One could thus imply that the reliability performance indicates that vendor B has an order of magnitude improve- ment in performance over vendor A with neither one seeing an occurrence of failure during their performance. The incorrect assumption of a constant failure rate over time can potentially result in a less reliable device being designed into an application. The reliability testing assump- tions and test methodology between the various vendors needs to be critiqued to insure a full understanding of the product performance over the intended lifetime, especially in the case of a new product. Testing to failure and determina- tion of the lifetime statistics is beyond the scope of this paper and presented elsewhere [2]. INDUSTRY RELIABILITY STANDARDS Reliability standards for large market segments are often developed by “cross-corporation” committees that evaluate the requirements for the particular application of interest. It is the role of these committees to generate documents intended as guides for technical personnel of the end users and suppliers, to assist with the following functions: speci- fying, developing, demonstrating, calibrating, and testing the performance characteristics for the specific application. One such committee which has developed a standard for a particular application is the Blood Pressure Monitoring Committee of the Association for the Advancement of Medical Instrumentation (AAMI) [3]. Their document, the “American National Standard for Interchangeability and Performance of Resistive Bridge Type Blood Pressure Transducers”, has an objective to provide performance requirements, test methodology, and terminology that will help insure that safe, accurate blood pressure transducers are supplied to the marketplace. In the automotive arena, the Society of Automotive Engineers (SAE) develops standards for various pressure sensor applications such as SAE document J1346, “Guide to Manifold Absolute Pressure Transducer Representative Test Method” [4]. While these two very distinct groups have successfully developed the requirements for their solid-state silicon pressure sensor needs, no real standard has been set for the general industrial marketplace to insure products being offered have been tested to insure reliability under industrial conditions. Motorola has utilized MIL-STD-750 as a refer- ence document in establishing reliability testing practices for the silicon pressure sensor, but the differences in the technology between a discrete semiconductor and a silicon pressure sensor varies dramatically. The additional tests that are utilized in semiconductor sensor reliability testing are based on the worst case operational conditions that the device might encounter in actual usage. ESTABLISHED SENSOR TESTING Motorola has established semiconductor sensor reliability testing based on exercising to detect failures by the presence of the environmental stress. Potential failure modes and causes are developed by allowing tests to run beyond the normal test times, thus stressing to destruction. The typical reliability test matrix used to insure conformance to customers end usage is as follows [5]: PULSED PRESSURE TEMPERATURE CYCLING WITH BIAS (PPTCB) This test is an environmental stress test combined with cyclic pressure loading in which the devices are alternately subjected to a low and high temperature while operating under bias under a cyclical pressure load. This test simulates the extremes in the operational life of a pressure sensor. PPTCB evaluates the sensor’s overall performance as well as evaluating the die, die bond, wire bond and package integrity. Typical Test Conditions: Temperature per specified operating limits (i.e., Ta = –40 to 125 °C for an automotive application). Dwell time ≥ 15 minutes, transfer time ≤ 5 minutes, bias = 100% rated voltage. Pressure = 0 to full scale, pressure frequency = 0.05 Hz, test time = up to 1000 hours. Potential Failure Modes: Open, short, parametric shift. Potential Failure Mechanisms: Die defects, wire bond fatigue, die bond fatigue, port adhesive failure, volumetric gel changes resulting in excessive package stress. Mechanical creep of packaging material. HIGH HUMIDITY, HIGH TEMPERATURE WITH BIAS (H3TB) A combined environmental/electrical stress test in which devices are subjected to an elevated ambient temperature and humidity while under bias. The test is useful for evaluating package integrity as well as detecting surface contamination and processing flaws. Typical Test Conditions: Temperature between 60 and 85 °C, relative humidity between 85 and 90%, rated voltage, test time = up to 1000 hours. Potential Failure Modes: Open, short, parametric shift. Potential Failure Mechanisms: Shift from ionic affect, parametric instability, moisture ingress resulting in exces- sive package stress, corrosion. HIGH TEMPERATURE WITH BIAS (HTB) This operational test exposes the pressure sensor to a high temperature ambient environment in which the device is biased to the rated voltage. The test is useful for evaluating the integrity of the interfaces on the die and thin film stability. Typical Test Conditions: Temperature per specified operational maximum, bias = 100% rated voltage, test time = up to 1000 hours. Potential Failure Modes: Parametric shift in offset and/or sensitivity. Potential Failure Mechanisms: Bulk die or diffusion defects, film stability and ionic contamination. HIGH AND LOW TEMPERATURE STORAGE LIFE (HTSL, LTSL) High and low temperature storage life testing is performed to simulate the potential shipping and storage conditions that the pressure sensor might encounter in actual usage. The test also evaluates the devices thermal integrity at worst case temperatures. Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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