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D8UB100 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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D8UB100 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente D8UB05 ~ D8UB100 Voltage 50V ~ 1000V 8.0Amp Glass Passivated Bridge Rectifiers 25-Jun-2015 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Io : 8A VRRM : 50~1000V Glass passivated chip High surge forward current capability APPLICATIONS General purpose 1 phase Bridge rectifier applications MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Part Number Parameter Symbol D8UB 05 D8UB 10 D8UB 20 D8UB 40 D8UB 60 D8UB 80 D8UB 100 Unit Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Without heatsink TA =29°C 1.5 Average Rectified Output Current @ 60Hz sine wave, R-load With heatsink TC =140°C IO 8.0 A Surge (Nonrepetitive) Forward Current @ 60HZ sine wave, 1 cycle, TJ=25°C IFSM 170 A Current Squared Time 1 I 2t 120 A 2S Dielectric Strength@ Terminals to case ,AC 1 minute VDIS 2 KV Mounting Torque@ Recommend torque : 5kg.cm Tor 8 Kg.cm Peak Forward Voltage@ IFM=4A, Pulse measurement, Rating of per diode VFM 1.1 V Peak Reverse Current@ VRM=VRRM , Pulse measurement, Rating of per diode IRRM 10 µA Without heatsink RθJA 55 Thermal Resistance With heatsink RθJC 1.5 °C / W Junction and Storage temperature range TJ,TSTG -55~+150 °C Notes: 1. 1ms≤t<8.3ms TJ=25°C ,Rating of per diode Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 13.3 14.3 G 13.1 13.5 B 10.3 11.3 H 3.7 3.9 C 6.4 7.4 J 2.0 2.2 D 4.5 5.5 K 0.4 0.6 E 1.05 1.45 L 2.6 3.6 F 0.60 0.85 M 3.1 3.4 D3K |
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