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SCT2280KE Datasheet(PDF) 1 Page - Rohm |
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SCT2280KE Datasheet(HTML) 1 Page - Rohm |
1 / 14 page www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Datasheet SCT2280KE N-channel SiC power MOSFET • Induction heating • Motor drives • Solar inverters • DC/DC converters • Switch mode power supplies ID,pulse *2 35 A VDSS 1200 V ID *1 14 A ID *1 10 A Junction temperature Tj 175 °C Range of storage temperature Tstg 55 to 175 °C Gate - Source voltage (DC) VGSS 6 to 22 V Power dissipation (Tc = 25°C) PD 108 W Gate - Source surge voltage (Tsurge ˂ 300nsec) VGSS-surge *3 10 to 26 V Absolute maximum ratings (T a = 25°C) Features 108W Application 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Symbol Value Unit Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Parameter Tube - Type Packaging Reel size (mm) C SCT2280KE Basic ordering unit (pcs) Tape width (mm) - 30 Marking Packing code Outline Inner circuit Packaging specifications TO-247 1200V 14A VDSS ID PD RDS(on) (Typ.) 280m (1) (2) (3) (1) Gate (2) Drain (3) Source *1 Body Diode (1) (3) (2) *1 1/12 2017.07 - Rev.D |
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