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S4101 Datasheet(PDF) 1 Page - Rohm |
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S4101 Datasheet(HTML) 1 Page - Rohm |
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1 / 13 page  www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. Datasheet S4101 N-channel SiC power MOSFET bare die 1200V 40m VDSS RDS(on) (Typ.) ID 55A *1 5) Simple to drive 3) Fast reverse recovery Inner circuit 2) Fast switching speed 4) Easy to parallel Unit Value Features 1) Low on-resistance Symbol ・Induction heating Application ・Switch mode power supplies ・Solar inverters ・DC/DC converters Parameter ・Motor drives Absolute maximum ratings (T a = 25°C) Drain - Source voltage Tc = 25°C Pulsed drain current Gate - Source voltage Continuous drain current Range of storage temperature Tj 175 °C Tstg 55 to 175 °C A VGSS 137 ID,pulse *2 Junction temperature 4 to 22 V Gate-Source Surge Voltage VGSS_surge 4 to 22 V Recommended Drive Voltage VGS_op 0 / 18 V VDSS 1200 V ID *1 55 A (1) Gate (2) Drain (3) Source *1 Body Diode (1) (3) (2) *1 1/11 2017.08 - Rev.B |
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