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NCP5104PG Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP5104PG Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 15 page  NCP5104, NCV5104 www.onsemi.com 4 ELECTRICAL CHARACTERISTIC (VCC = Vboot = 15 V, VGND = Vbridge, −40°C < TJ < 125°C, Outputs loaded with 1 nF) Rating Symbol TJ −40°C to 125°C Units Min Typ Max OUTPUT SECTION Output high short circuit pulsed current VDRV = 0 V, PW v 10 ms (Note 1) IDRVsource − 250 − mA Output low short circuit pulsed current VDRV = Vcc, PW v 10 ms (Note 1) IDRVsink − 500 − mA Output resistor (Typical value @ 25 °C) Source ROH − 30 60 W Output resistor (Typical value @ 25 °C) Sink ROL − 10 20 W High level output voltage, VBIAS−VDRV_XX @ IDRV_XX = 20 mA VDRV_H − 0.7 1.6 V Low level output voltage VDRV_XX @ IDRV_XX = 20 mA VDRV_L − 0.2 0.6 V DYNAMIC OUTPUT SECTION Turn−on propagation delay (Vbridge = 0 V) (Note 2) tON − 620 800 ns Turn−off propagation delay (Vbridge = 0 V or 50 V) (Note 3) tOFF − 100 170 ns Shutdown propagation delay, when Shutdown is enabled tsd_en − 100 170 ns Shutdown propagation delay, when Shutdown is disabled tsd_dis − 620 800 ns Output voltage rise time (from 10% to 90% @ VCC = 15 V) with 1 nF load tr − 85 160 ns Output voltage fall time (from 90% to 10% @ VCC = 15 V) with 1 nF load tf − 35 75 ns Propagation delay matching between the High side and the Low side @ 25 °C (Note 4) Dt − 10 45 ns Internal fixed dead time (Note 5) DT 400 520 650 ns INPUT SECTION Low level input voltage threshold VIN − − 0.8 V Input pull−down resistor (VIN < 0.5 V) RIN − 200 − k W High level input voltage threshold VIN 2.3 − − V Logic “1” input bias current @ VIN = 5 V @ 25°C IIN+ − 5 25 mA Logic “0” input bias current @ VIN = 0 V @ 25°C IIN− − − 2.0 mA SUPPLY SECTION Vcc UV Start−up voltage threshold Vcc_stup 8.0 8.9 9.8 V Vcc UV Shut−down voltage threshold Vcc_shtdwn 7.3 8.2 9.0 V Hysteresis on Vcc Vcc_hyst 0.3 0.7 − V Vboot Start−up voltage threshold reference to bridge pin (Vboot_stup = Vboot − Vbridge) Vboot_stup 8.0 8.9 9.8 V Vboot UV Shut−down voltage threshold Vboot_shtdwn 7.3 8.2 9.0 V Hysteresis on Vboot Vboot_shtdwn 0.3 0.7 − V Leakage current on high voltage pins to GND (VBOOT = VBRIDGE = DRV_HI = 600 V) IHV_LEAK − 5 40 mA Consumption in active mode (Vcc = Vboot, fsw = 100 kHz and 1 nF load on both driver outputs) ICC1 − 4 5 mA Consumption in inhibition mode (Vcc = Vboot) ICC2 − 250 400 mA Vcc current consumption in inhibition mode ICC3 − 200 − mA Vboot current consumption in inhibition mode ICC4 − 50 − mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Parameter guaranteed by design. 2. TON = TOFF + DT 3. Turn−off propagation delay @ Vbridge = 600 V is guaranteed by design. 4. See characterization curve for Dt parameters variation on the full range temperature. 5. Timing diagram definition see: Figure 4, Figure 5 and Figure 6. |
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