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CMT60N03N263 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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CMT60N03N263 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
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2 / 8 page  CMT60N03 N-CHANNEL Logic Level Power MOSFET 2004/05/24 Preliminary Champion Microelectronic Corporation Page 2 ORDERING INFORMATION Part Number Package CMT60N03N252 TO-252 CMT60N03N263 TO-263 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT60N03 Characteristic Symbol Min Typ Max Units OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) VDSS 30 V Breakdown Voltage Temperature Coefficient, Fig.11 (Reference to 25℃ , ID = 250 μA) Δ VDSS/∆TJ 27 mV/℃ Drain-to-Source Leakage Current (VDS = 24 V, VGS = 0 V, TJ = 25℃) (VDS = 24 V, VGS = 0 V, TJ = 125℃) IDSS 1 10 µA Gate-to-Source Forward Leakage (VGS = 20 V) IGSS 100 nA Gate-to-Source Reverse Leakage (VGS = -20 V) IGSS -100 nA ON Characteristics Gate Threshold Voltage,Fig.12 (VDS = VGS, ID = 250 μA) VGS(th) 1.0 3.0 V Static Drain-to-Source On-Resistance, Fig.9,10 (Note 5) (VGS = 10 V, ID = 15A) (VGS = 4.5 V, ID = 12A) RDS(on) 10.8 15.4 12.5 mΩ Forward Transconductance (VDS = 15 V, ID = 12A) (Note 5) gFS 28 S Dynamic Characteristics Input Capacitance Ciss 1520 pF Output Capacitance Coss 314 pF Reverse Transfer Capacitance (VDS = 15 V, VGS = 0 V, f = 1.0 MHz) Fig.14 Crss 152 pF Total Gate Charge (VGS = 10 V) Qg 27.9 35 nC Total Gate Charge (VGS = 4.5 V) Qg 14 19 nC Gate-to-Source Charge Qgs 4.9 nC Gate-to-Drain Charge (VDS = 15 V, ID = 12 A) (Note 6) Fig.15 Qgd 4.3 nC Resistive Switching Characteristics Turn-On Delay Time td(on) 10 ns Rise Time tr 3.4 ns Turn-Off Delay Time td(off) 36 ns Fall Time (VDD = 15 V, ID = 12 A, VGS = 10 V, RG = 1.0Ω) (Note 6) tf 6.0 ns Turn-On Delay Time td(on) 16 ns Rise Time tr 7.2 ns Turn-Off Delay Time td(off) 34 ns Fall Time (VDD = 15 V, ID = 12 A, VGS = 4.5V, RG = 1.0Ω) (Note 6) tf 14 ns Source-Drain Diode Characteristics Continuous Source Current (Body Diode Fig.16) IS 50 A Pulse Source Current (Body Diode) Integral pn-diode in MOSFET ISM Fig.6 A Forward On-Voltage (IS = 12 A, VGS = 0 V) VSD 1.0 V Forward Turn-On Time trr 25 38 ns Reverse Recovery Charge (IF = 12 A, VGS = 0 V, di/dt = 100A/µs) Qrr 31 46 nC |
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