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DB152 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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DB152 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente DB151~DB157 50V~1000 V, 1.5 A Surface Mount Bridge Rectifiers 09-Dec-2015 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A F J E B H C G D RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Glass passivated chip High surge forward current capability APPLICATIONS General purpose 1 phase Bridge rectifier applications MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Part Number Parameters Symbol DB 151 DB 152 DB 153 DB 154 DB 155 DB 156 DB 157 Unit Peak Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Working Peak Reverse Voltage VRMS 35 70 140 280 420 560 700 V DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Average Rectified Output Current@ 60Hz sine wave, R-load, TA=25°C I(AV) 1.5 A Non-repetitive Surge Forward Current@ 60Hz sine wave, 1 cycle, TJ=25°C IFSM 30 A Current Squared Time 1 I 2t 3.7 A 2S Peak Forward Voltage@ IFM=1.5A, pulse measurement, rating of per diode VFM 1.1 V Peak Reverse Current@ VRM=VRRM, pulse measurement, rating of per diode IRRM 10 µA Thermal Resistance from Junction to Ambient@ on a glass-epoxy substrate RθJA 68 °C / W Thermal Resistance from Junction to Lead RθJL 15 °C / W Junction and Storage Temperature Range TJ, TSTG -55~150 °C Notes: 1. 1ms≤t<8.3ms, TJ=25°C, rating of per diode. DB Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 8.13 8.51 F 0.46 0.58 B 7.6 8.9 G 1.27 2.03 C 2.8 3.3 H 3.81 4.69 D 6.2 6.5 J 0.89 1.14 E 5 5.2 |
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