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SCS306AP Datasheet(PDF) 1 Page - Rohm |
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SCS306AP Datasheet(HTML) 1 Page - Rohm |
1 / 7 page Datasheet SCS306AP SiC Schottky Barrier Diode *1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C Junction temperature Tj 175 °C Range of storage temperature Tstg 55 to 175 °C 1≦PW≦10ms, Tj=150°C 8 A 2s Total power disspation PD 46 W i 2t value 1≦PW≦10ms, Tj=25°C ∫i2dt 11 A 2s A Repetitive peak forward current IFRM 28 A Surge non- repetitive forward current PW=10ms sinusoidal, Tj=25°C IFSM 47 A PW=10ms sinusoidal, Tj=150°C 40 A PW=10 s square, T j=25°C 170 Reverse voltage (DC) VR 650 V Continuous forward current (Tc= 135°C) IF 6A Reverse voltage (repetitive peak) VRM 650 V Packing code C9 Marking SCS306AP Absolute maximum ratings (T j = 25°C) Parameter Symbol Value Unit Packaging specifications Type Packaging Tube Construction Reel size (mm) - Silicon carbide epitaxial planar type Tape width (mm) - Basic ordering unit (pcs) 50 Features Inner circuit 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible 4) High surge current capability Outline VR 650V TO-220ACP IF 6A QC 19nC (1) Cathode (2) Cathode (3) Anode (1) (2) (3) (3) (2) (1) *1 *2 1/5 2017.07 - Rev.D www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. |
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