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SCS306AP Datasheet(PDF) 1 Page - Rohm

Part # SCS306AP
Description  SiC Schottky Barrier Diode
Download  7 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

SCS306AP Datasheet(HTML) 1 Page - Rohm

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Datasheet
SCS306AP
SiC Schottky Barrier Diode
*1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C
Junction temperature
Tj
175
°C
Range of storage temperature
Tstg
55 to 175
°C
1≦PW≦10ms, Tj=150°C
8
A
2s
Total power disspation
PD
46
W
i
2t value
1≦PW≦10ms, Tj=25°C
i2dt
11
A
2s
A
Repetitive peak forward current
IFRM
28
A
Surge non-
repetitive forward
current
PW=10ms sinusoidal, Tj=25°C
IFSM
47
A
PW=10ms sinusoidal, Tj=150°C
40
A
PW=10
s square, T
j=25°C
170
Reverse voltage (DC)
VR
650
V
Continuous forward current
(Tc= 135°C)
IF
6A
Reverse voltage (repetitive peak)
VRM
650
V
Packing code
C9
Marking
SCS306AP
Absolute maximum ratings (T
j = 25°C)
Parameter
Symbol
Value
Unit
Packaging specifications
Type
Packaging
Tube
Construction
Reel size (mm)
-
Silicon carbide epitaxial planar type
Tape width (mm)
-
Basic ordering unit (pcs)
50
Features
Inner circuit
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
4) High surge current capability
Outline
VR
650V
TO-220ACP
IF
6A
QC
19nC
(1) Cathode
(2) Cathode
(3) Anode
(1)
(2)
(3)
(3)
(2)
(1)
*1
*2
1/5
2017.07 - Rev.D
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.


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