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GS8673EQ18BK-625S Datasheet(PDF) 7 Page - GSI Technology

Part # GS8673EQ18BK-625S
Description  For use with GSI SRAM Port IP
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Manufacturer  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS8673EQ18BK-625S Datasheet(HTML) 7 Page - GSI Technology

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GS8673EQ18/36BK-725S/625S/550S
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.03 6/2014
7/25
© 2012, GSI Technology
Error Correction (ECC)
These devices implement a single-bit error detection and correction algorithm (specifically, a Hamming Code) on each DDR data
word (comprising two 9-bit data bytes) transmitted on each 9-bit data bus (i.e., transmitted on D/Q[8:0], D/Q[17:9], D/Q[26:18],
and D/Q[35:27]). To accomplish this, 5 ECC parity bits (invisible to the user) are utilized per every 18 data bits (visible to the
user).
The ECC algorithm neither corrects nor detects multi-bit errors. However, ECCRAMs are architected in such a way that a single
SER event very rarely causes a multi-bit error across any given “transmitted data unit”, where a “transmitted data unit” represents
the data transmitted as the result of a single read or write operation to a particular address. The extreme rarity of multi-bit errors
results in the SER mentioned previously (i.e., <0.002 FITs/Mb (measured at sea level)).
Not only does the on-chip ECC significantly improve SER performance, but it also frees up the entire memory array for data
storage. Frequently, SRAM applications allocate 1/9th of the memory array (i.e., one “error bit” per eight “data bits”) for error
detection (either simple parity error detection, or system-level ECC error detection and correction). Such error-bit allocation is
unnecessary with ECCRAMs; the entire memory array can be utilized for data storage, effectively providing 12.5% greater storage
capacity compared to SRAMs of the same density not equipped with on-chip ECC.
Input Timing
These devices utilize three pairs of positive and negative input clocks, CK & CK and KD[1:0] & KD[1:0], to latch the various
synchronous inputs. Specifically:
↑CK and ↑CK latch all address (SA) inputs.
↑CK latches all control (R, W) inputs.
↑KD[1:0] and ↑KD[1:0] latch particular write data (D) inputs, as follows:
↑KD0 and ↑KD0 latch D[17:0] in x36, and D[8:0] in x18.
↑KD1 and ↑KD1 latch D[35:18] in x36, and D[17:9] in x18.
Output Timing
These devices provide two pairs of positive and negative output clocks (aka “echo clocks”), CQ[1:0] & CQ[1:0], whose timing is
tightly aligned with read data in order to enable reliable source-synchronous data transmission.
Output timing is generated by
↑CK and ↑CK, as follows:
↑CK generates ↑CQ[1:0], ↓CQ[1:0], Q1 active, and Q2 inactive.
• .
↑CK generates ↑CQ[1:0], ↓CQ[1:0], Q1 inactive, Q2 active, and QVLD active/inactive.
Note: Q1 and Q2 indicate the first and second pieces of read data transferred in any given clock cycle during Read operations.
↑CQ[1:0] and ↑CQ[1:0] align with particular read data (Q) and read data valid (QVLD) outputs, as follows:
↑CQ0 and ↑CQ0 align with Q[17:0], QVLD0 in x36, and with Q[8:0], QVLD0 in x18.
↑CQ1 and ↑CQ1 align with Q[35:18], QLVD1 in x36, and with Q[17:9], QVLD1 in x18.


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