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CNY17-2X006 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # CNY17-2X006
Description  Optocoupler, Phototransistor Output, with Base Connection
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

CNY17-2X006 Datasheet(HTML) 2 Page - Vishay Siliconix

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CNY17
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 08-Jan-14
2
Document Number: 83606
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Forward surge current
tp
≤ 10 μs
IFSM
2.5
A
LED power dissipation
at 25 °C
Pdiss
100
mW
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter base breakdown voltage
BVEBO
7V
Collector current
IC
50
mA
tp/T = 0.5, tp
≤ 10 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter and detector
t = 1 min
VISO
5000
VRMS
Storage temperature
Tstg
-55 to +150
°C
Operating temperature
Tamb
-55 to +110
°C
Soldering temperature (1)
2 mm from case,
≤ 10 s
Tsld
260
°C
Total power dissipation
Pdiss
250
mW
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.39
1.65
V
Breakdown voltage
IR = 10 μA
VBR
6V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance
Rth
750
K/W
0
50
100
150
200
250
300
0
20
40
60
80
100
120
T
amb - Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode


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