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H11AA1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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H11AA1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: optocoupleranswers@vishay.com Document Number: 83608 2 Rev. 1.7, 23-Feb-11 H11AA1 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note • Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Forward continuous current IF ± 60 mA Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.3 mW/°C OUTPUT Power dissipation Pdiss 200 mW Derate linearly from 25 °C 2.6 mW/°C Collector emitter breakdown voltage BVCEO 30 V Emitter base breakdown voltage BVEBO 5V Collector base breakdown voltage BVCBO 70 V COUPLER Isolation test voltage (RMS) Between emitter and detector, referred to standard climate 23 °C/50% RH, DIN 50014 VISO 5300 VRMS Creepage distance 7mm Clearance distance 7mm Comparative tracking index per DIN IEC 112/VDE 0303, part 1 CTI 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 Storage temperature range Tstg - 55 to + 150 °C Operating temperature range Tamb - 55 to + 100 °C Lead soldering time at 260 °C Tsld 10 s ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = ± 10 mA VF 1.2 1.5 V OUTPUT Collector emitter breakdown voltage IC = 1 mA BVCEO 30 V Emitter base breakdown voltage IE = 100 μA BVEBO 5V Collector base breakdown voltage IC = 100 μA BVCBO 70 V Collector emitter leakage current VCE = 10 V ICEO 5100 nA COUPLER Collector emitter saturation voltage IF = ± 10 mA, IC = 0.5 mA VCEsat 0.4 V CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT DC current transfer ratio IF = ± 10 mA, VCE = 10 V CTRDC 20 % Symmetry (CTR at + 10 mA)/(CTR at - 10 mA) 0.33 1 3 |
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